DF2170VTE33 Renesas Electronics America, DF2170VTE33 Datasheet - Page 453

MCU 3V 256K 100-TQFP

DF2170VTE33

Manufacturer Part Number
DF2170VTE33
Description
MCU 3V 256K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2170VTE33
HD64F2170VTE33

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170VTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
6. After programming/erasing, the flash memory should be inhibited until FKEY is cleared.
7. Switching of the MATs by FMATS should be needed when programming/erasing of the user
8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 14.8 Executable MAT
Note:
Operation
Programming
Erasing
The reset state (RES = 0) must be in place for more than 100 µs when the LSI mode is changed
to reset on completion of a programming/erasing operation.
Transitions to the reset state, and hardware standby mode are inhibited during
programming/erasing. When the reset signal is accidentally input to the chip, a longer period in
the reset state than usual (100 µs) is needed before the reset signal is released.
boot MAT is operated in user-boot mode. The program which switches the MATs should be
executed from the on-chip RAM. See section 14.6, Switching between User MAT and User
Boot MAT. Please make sure you know which MAT is selected when switching between
them.
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
*
Programming/Erasing is possible to user MATs.
User Program Mode
Table 14.9 (1)
Table 14.9 (2)
Initiated Mode
Rev. 2.00, 03/04, page 419 of 534
User Boot Mode*
Table 14.9 (3)
Table 14.9 (4)

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