AT91SAM7SE512-AU Atmel, AT91SAM7SE512-AU Datasheet - Page 131

• Manufacturer Part Number: AT91SAM7SE512-AU
• Description: IC ARM7 MCU FLASH 512K 128-LQFP
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7SE512-AU

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: EBI/EMI, I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 88
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 128-LQFP
• Cpu Family: 91S
• Device Core: ARM7TDMI
• Device Core Size: 32b
• Frequency (max): 55MHz
• Interface Type: EBI/SPI/TWI/USART
• Total Internal Ram Size: 32KB
• # I/os (max): 88
• Number Of Timers - General Purpose: 3
• Operating Supply Voltage (typ): 1.8/3.3V
• Operating Supply Voltage (max): 1.95/3.6V
• Operating Supply Voltage (min): 1.65/3V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 128
• Package Type: LQFP
• No. Of I/o's: 88
• Ram Memory Size: 32KB
• Cpu Speed: 48MHz
• No. Of Timers: 3
• No. Of Pwm Channels: 4
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Processor Series: AT91SAMx
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Maximum Clock Frequency: 48 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 3
• Operating Supply Voltage: 1.8 V to 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JTRACE-ARM-2M, KSK-AT91SAM7S-PL, MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: AT91SAM-ICE, AT91-ISP, AT91SAM7SE-EK
• Minimum Operating Temperature: - 40 C
• For Use With: AT91SAM7SE-EK - EVAL BOARD FOR AT91SAM7SEAT91SAM-ICE - EMULATOR FOR AT91 ARM7/ARM9
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

20.3.4.1
20.3.4.2
6222F–ATARM–14-Jan-11
Flash Read Command
Flash Write Command
This command is used to read the Flash contents. The memory map is accessible through this
command. Memory is seen as an array of words (32-bit wide). The read command can start at
any valid address in the memory plane. This address must be word-aligned. The address is
automatically incremented.
Table 20-19. Read Command
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-20. Write Command
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. How-
ever, the lock bit is automatically set at the end of the Flash write operation. As a lock region is
composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. How-
ever, before programming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL
commands.
Read/Write
Write
Write
Read
Read
...
Read
Read/Write
Write
Write
Write
Write
Write
Write
• before access to any page than the current one
• at the end of the number of words transmitted
DR Data
Memory [address]
Memory [address+4]
...
Memory [address+(Number of Words to Read - 1)* 4]
(Number of Words to Read) << 16 | READ
Address
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
SAM7SE512/256/32 Preliminary
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