FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 3

• Manufacturer Part Number: FDA38N30
• Description: MOSFET N-CH 300V TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA38N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA38N30 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
6000
4000
2000
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
Drain Current and Gate Voltage
0
10
10
10
10
2
1
0
10
-1
0
-1
Top :
Bottom : 5.5 V
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
C
C
C
oss
iss
rss
V
DS
V
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
V
10
GS
I
D
10
0
, Drain Current [A]
= 10V
50
0
75
C
C
C
iss
oss
rss
V
GS
= C
= C
= C
10
* Notes:
= 20V
gs
gd
ds
10
1
1. 250
2. T
+ C
+ C
1
* Note : T
100
* Note ;
C
gd
gd
= 25
(C
1. V
2. f = 1 M Hz

s Pulse Test
ds
G S
= shorted)
o
C
J
= 0 V
= 25
125
3
10
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
2
1
0
10
10
10
Figure 6. Gate Charge Characteristics
2
2
1
0
12
10
0.2
8
6
4
2
0
0
Variation vs. Source Current
150
0.4
25
o
10
C
4
o
C
150
0.6
V
and Temperatue
o
GS
C
V
SD
, Gate-Source Voltage [V]
Q
20
, Source-Drain voltage [V]
25
G
, Total Gate Charge [nC]
o
0.8
C
6
-55
V
V
V
30
1.0
DS
DS
DS
o
C
= 60V
= 150V
= 240V
8
1.2
40
* Notes:
1. V
2. 250
* Notes:
1.4
1. V
2. 250
DS
50
10

= 20V
GS
s Pulse Test
? Note : I

= 0V
s Pulse Test
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1.6
D
60
= 38A
12
1.8