FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 5
![MOSFET N-CH 300V TO-3](/photos/13/92/139241/fda38n30_sml.jpg)
FDA38N30
Manufacturer Part Number
FDA38N30
Description
MOSFET N-CH 300V TO-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDA38N30.pdf
(8 pages)
Specifications of FDA38N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2600pF @ 25V
Power - Max
312W
Mounting Type
Through Hole
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
38 A
Power Dissipation
312 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
60 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDA38N30
Manufacturer:
TI
Quantity:
2 000
Part Number:
FDA38N30
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDA38N30 Rev. A
10V
10V
12V
12V
3mA
3mA
200nF
200nF
R
R
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
300nF
300nF
V
V
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L
V
V
DD
DD
5
V
V
DS
DS
V
V
10V
10V
V
V
V
V
GS
GS
DS
DS
GS
GS
10%
10%
Q
Q
90%
90%
gs
gs
t
t
d(on)
d(on)
t
t
on
on
t
t
r
r
Q
Q
Q
Q
g
g
gd
gd
Charge
Charge
t
t
d(off)
d(off)
t
t
off
off
t
t
f
f
www.fairchildsemi.com