FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 5

• Manufacturer Part Number: FDA38N30
• Description: MOSFET N-CH 300V TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA38N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA38N30 Rev. A
10V
10V
12V
12V
3mA
3mA
200nF
200nF
R
R
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
300nF
300nF
V
V
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L
V
V
DD
DD
5
V
V
DS
DS
V
V
10V
10V
V
V
V
V
GS
GS
DS
DS
GS
GS
10%
10%
Q
Q
90%
90%
gs
gs
t
t
d(on)
d(on)
t
t
on
on
t
t
r
r
Q
Q
Q
Q
g
g
gd
gd
Charge
Charge
t
t
d(off)
d(off)
t
t
off
off
t
t
f
f
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