FDA38N30 Fairchild Semiconductor, FDA38N30 Datasheet - Page 4

• Manufacturer Part Number: FDA38N30
• Description: MOSFET N-CH 300V TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA38N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA38N30 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
1000
0.01
100
0.1
10
1.2
1.1
1.0
0.9
0.8
1
-100
1
Operation in This Area
is Limited by R
vs. Temperature
-50
T
V
J
DS
, Junction Temperature
, Drain-Source Voltage [V]
0.01
DS(on)
0.1
10
10
*Notes:
0
-5
1. T
2. T
3. Single Pulse
Single pulse
0.01
0.5
0.02
0.2
0.1
0.05
C
J
= 150
= 25
Figure 11. Transient Thermal Response Curve
DC
50
o
10
C
o
C
10ms
-4
100
1ms
*Notes:
[
100
1. V
2. I
o
100
C
D
]

GS
s
= 250uA
10
= 0V
10
-3
Rectangular Pulse Duration [sec]

s
500
150
(Continued)
10
-2
4
40
30
20
10
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-1
-100
*Notes:
P
P
1. Z
2. Duty Factor, D= t
3. T
50
DM
DM
10
T
-50
C

JM
vs. Case Temperature
T
0
JC
, Case Temperature
J
, Junction Temperature
(t) = 0.4
- T
vs. Temperature
t
C
1
t
t
2
= P
1
75
t
2
o
DM
10
C/W Max.
0
1
* Z
1

/t
JC
2
100
(t)
50
10
[
o
C
2
]
*Notes:
125
[
1. V
2. I
o
100
C
D
]
GS
= 19A
= 10V
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150
150