FDPF12N50NZ Fairchild Semiconductor, FDPF12N50NZ Datasheet

MOSFET N-CH 500V TO-220FP

FDPF12N50NZ

Manufacturer Part Number
FDPF12N50NZ
Description
MOSFET N-CH 500V TO-220FP
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF12N50NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 5.75A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1235pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. A
MOSFET Maximum Ratings
*Dran current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N50NZ / FDPF12N50NZ
N-Channel MOSFET
500V, 11.5A, 0.52Ω
Features
• R
• Low gate charge ( Typ. 23nC )
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.46Ω ( Typ. ) @ V
( Typ. 14pF )
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FDP Series
= 10V, I
D
T
= 5.75A
C
Parameter
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
= 25
C
= 25
o
C unless otherwise noted
o
G
C)
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(potted)
*
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP12N50NZ
FDP12N50NZ
1.37
0.73
62.5
11.5
170
6.9
0.5
46
-55 to +150
G
G
11.5
500
±25
560
300
4.5
17
UniFET-II
FDPF12N50NZ
FDPF12N50NZ
11.5*
0.33
62.5
6.9*
46*
3.0
42
-
October 2010
www.fairchildsemi.com
D
D
S
S
switching
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF12N50NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ θCS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDP12N50NZ / FDPF12N50NZ Rev. A Description = 5.75A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 8.5mH 11.5A 50V 25Ω, Starting ≤ 11.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP12N50NZ / FDPF12N50NZ Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

Page 3

... V = 20V GS 0 Drain Current [A] D Figure 5. Capacitance Characteristics 2500 C iss = oss = rss = C gd 2000 1500 1000 500 0 0 Drain-Source Voltage [V] DS FDP12N50NZ / FDPF12N50NZ Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10 o *Note ...

Page 4

... 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FDP12N50NZ / FDPF12N50NZ Rev. A (Continued) Figure 8. On-Resistance Variation *Notes 250uA D 50 100 150 Figure 10.Maximum Safe Operating Area μ μ 100 s 1ms 10ms 100 100 ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDP12N50NZ 5 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 Figure 13. Transient Thermal Response Curve - FDPF12N50NZ 5 D=0.5 1 0.2 0.1 0. 0.02 0. FDP12N50NZ / FDPF12N50NZ Rev. A (Continued Notes : Duty Factor, D Rectangular Pulse Duration [sec] *Notes: 1 ...

Page 6

... FDP12N50NZ / FDPF12N50NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP12N50NZ / FDPF12N50NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions FDP12N50NZ / FDPF12N50NZ Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP12N50NZ / FDPF12N50NZ Rev. A (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N50NZ / FDPF12N50NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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