FDPF12N50NZ Fairchild Semiconductor, FDPF12N50NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF12N50NZ
• Description: MOSFET N-CH 500V TO-220FP
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF12N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1235pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50NZ / FDPF12N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current vs. Case Temperature
12
10
8
6
4
2
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.01
100
25
0.1
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
50
- FDPF12N50NZ
T
-50
T
V
C
, Case Temperature
J
DS
, Junction Temperature
*Notes:
, Drain-Source Voltage [V]
1. T
2. T
3. Single Pulse
DS(on)
10
75
C
J
= 150
= 25
0
o
DC
C
o
100 ms
C
100
10ms
50
[
1ms
100
o
C
]
100
125
*Notes:
[
1. V
2. I
o
100
μ
C
D
s
GS
]
10
= 250uA
= 0V
μ
s
150
1000
150
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10.Maximum Safe Operating Area
0.01
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.1
10
1
-75 -50
1
Operation in This Area
is Limited by R
vs. Temperature
T
J
V
, Junction Temperature
- FDP12N50NZ
DS
, Drain-Source Voltage [V]
10
0
DS(on)
* Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
o
C
o
C
DC
100
10ms
1ms
*Notes:
[
1. V
2. I
100
100
o
C
D
]
μ
GS
= 5.75A
s
www.fairchildsemi.com
= 10V
30
μ
s
1000
150