FDPF12N50NZ Fairchild Semiconductor, FDPF12N50NZ Datasheet - Page 3

• Manufacturer Part Number: FDPF12N50NZ
• Description: MOSFET N-CH 500V TO-220FP
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF12N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 5.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1235pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50NZ / FDPF12N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
2500
2000
1500
1000
500
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
30
10
1
0
0.1
0.1
0
V
GS
Drain Current and Gate Voltage
=
15.0 V
10.0 V
V
V
8.0 V
7.0 V
6.5V
6.0 V
5.5 V
6
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
V
V
12
GS
GS
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
1
= 10V
= 20V
*Notes:
18
1. 250
2. T
*Note: T
C
C
= 25
μ
(
rss
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
24
10
C
= 25
GS
10
C
C
iss
oss
= 0V
o
C
)
20
30
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
0.1
10
50
10
10
1
1
8
6
4
2
0
0.4
3
0
V
4
SD
150
Variation vs. Source Current
and Temperature
0.6
, Body Diode Forward Voltage [V]
5
V
o
Q
C
GS
g
5
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
V
V
V
DS
DS
DS
o
C
0.8
= 100V
= 250V
= 400V
10
-55
6
o
25
C
o
C
*Notes:
7
1.0
15
1. V
2. 250
25
*Note: I
*Notes:
1. V
2. 250
o
DS
C
GS
μ
8
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
D
1.2
20
= 11.5A
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9
1.4
10
25