ATMEGA2560R231-CU Atmel, ATMEGA2560R231-CU Datasheet - Page 341

• Manufacturer Part Number: ATMEGA2560R231-CU
• Description: BUNDLE ATMEGA2560/RF231 PBGA
• Manufacturer: Atmel

Specifications of ATMEGA2560R231-CU

• Frequency: 2.4GHz
• Modulation Or Protocol: 802.15.4 Zigbee, 6LoWPAN, RF4CE, SP100, WirelessHART™, ISM
• Data Interface: PCB, Surface Mount
• Memory Size: 256kB Flash, 4kB EEPROM, 8kB RAM
• Antenna Connector: PCB, Surface Mount
• Package / Case: 100-CBGA and 32-QFN
• Processor Series: ATMEGA256x
• Core: AVR8
• Data Bus Width: 8 bit
• Program Memory Type: Flash
• Program Memory Size: 256 KB
• Data Ram Size: 8 KB
• Development Tools By Supplier: ATAVRRZ541, ATAVRRAVEN, ATAVRRZRAVEN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Power - Output: -
• Operating Temperature: -
• Applications: -
• Sensitivity: -
• Data Rate - Maximum: -
• Current - Transmitting: -
• Current - Receiving: -
• Lead Free Status / Rohs Status: Details

29.7
29.7.1
29.7.2
29.7.3
29.7.4
2549M–AVR–09/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5V - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5V - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
100 ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
ATmega640/1280/1281/2560/2561
CC
and GND.
Table 29-7 on page
Table 29-11 on page 340
(1)
memories plus Lock bits. The Lock bits are
338. When programming the Flash,
to “0000” and wait at least
341