APTGF90DH60T3G Microsemi Power Products Group, APTGF90DH60T3G Datasheet
APTGF90DH60T3G
Specifications of APTGF90DH60T3G
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APTGF90DH60T3G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90DH60T3G V I Application • Welding converters • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr CR1 & CR4 are IGBT protection diodes only APTGF90DH60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 125° ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF90DH60T3G T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGF90DH60T3G =15V) GE 200 T J 175 =25°C J 150 125 T =125°C J 100 2.5 3 3.5 0 Energy losses vs Collector Current ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90DH60T3G Forward Characteristic of diode 200 ...