APTGF90DH60T3G Microsemi Power Products Group, APTGF90DH60T3G Datasheet - Page 3

• Manufacturer Part Number: APTGF90DH60T3G
• Description: IGBT NPT BRIDGE 600V 110A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF90DH60T3G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Temperature sensor NTC
Symbol
∆R
Symbol Characteristic
Torque
SP3 Package outline
Thermal and package characteristics
V
R
T
∆B/B
B
Wt
T
T
R
ISOL
STG
thJC
25
25/85
C
J
25
/R
25
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
−
T
1
www.microsemi.com
⎞
⎟ ⎟
⎠
⎤
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
To heatsink
17
12
T
APTGF90DH60T3G
C
=100°C
Diode
IGBT
M4
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
5
4
Max
Max
0.55
150
125
100
110
0.3
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
%
K
%
V
g
3 - 5