APTGF90DH60T3G Microsemi Power Products Group, APTGF90DH60T3G Datasheet - Page 2
APTGF90DH60T3G
Manufacturer Part Number
APTGF90DH60T3G
Description
IGBT NPT BRIDGE 600V 110A SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF90DH60T3G.pdf
(5 pages)
Specifications of APTGF90DH60T3G
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF90DH60T3G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Electrical Characteristics
Dynamic Characteristics
Diode ratings and characteristics (CR2 & CR3)
CR1 & CR4 are IGBT protection diodes only
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
V
T
T
T
T
I
I
C
C
E
I
CE(sat)
Q
E
GE(th)
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
RRM
t
RM
I
off
sc
rr
ies
res
on
F
G
f
f
F
rr
r
r
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
www.microsemi.com
j
= 25°C unless otherwise specified
V
R
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
Test Conditions
V
I
V
V
Test Conditions
V
f = 1MHz
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
V
t
p
C
C
C
C
C
F
F
F
F
G
GE
G
G
R
R
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
=100A
= 100A
= 100A
= 100A
= 100A
= 200A
= 100A
= 100A
= 100A
=600V
= 2.2Ω
= 400V
= 2.2Ω
= 2.2Ω
= 15V ; V
= 0V, V
=15V
= V
= 20V, V
= 0V ; V
= ±15V
= ±15V
= ±15V
≤15V ; V
= 300V
= 300V
= 300V
CE
, I
j
CE
= 125°C
CE
C
CE
CE
Bus
= 600V
= 1.5mA
= 25V
=300V
= 0V
= 360V
T
T
APTGF90DH60T3G
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
Min
Min
Min
600
4.5
1530
Typ
100
160
220
290
Typ
Typ
240
130
150
450
1.6
1.3
2.2
5.5
4.3
0.4
25
10
20
25
11
30
2
2
1
3
Max
Max
Max
100
500
250
400
2.5
6.5
2
Unit
Unit
Unit
µA
µA
nA
nC
nC
mJ
nF
ns
ns
ns
V
V
A
V
A
V
2 - 5