APTGF90DH60T3G Microsemi Power Products Group, APTGF90DH60T3G Datasheet - Page 5

• Manufacturer Part Number: APTGF90DH60T3G
• Description: IGBT NPT BRIDGE 600V 110A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF90DH60T3G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
250
200
150
100
0
50
0
Operating Frequency vs Collector Current
0
0.9
0.05
0.7
0.5
0.1
0.3
switching
hard
25
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
50
ZVS
I
C
(A)
75
ZCS
100
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=2.2Ω
0.001
=300V
rectangular Pulse Duration (Seconds)
125
www.microsemi.com
Single Pulse
150
Diode
0.01
200
150
100
50
APTGF90DH60T3G
0
0
0.1
Forward Characteristic of diode
0.3
0.6
0.9
T
V
J
F
=125°C
(V)
1
1.2
1.5
T
J
=25°C
1.8
10
2.1
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