APTGF90DH60T3G Microsemi Power Products Group, APTGF90DH60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGF90DH60T3G
• Description: IGBT NPT BRIDGE 600V 110A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF90DH60T3G

• Igbt Type: NPT
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
160
120
200
175
150
125
100
3.5
2.5
1.5
0.5
0.35
0.25
0.15
0.05
80
40
Switching Energy Losses vs Gate Resistance
75
50
25
0.3
0.2
0.1
0
0
3
2
1
0
0.00001
0
0
5
0
Output Characteristics (V
0.3
0.5
0.5
0.9
0.7
0.1
6
0.05
Transfert Characteristics
2
Gate Resistance (ohms)
Eon
1
7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
T
J
0.0001
=125°C
1.5
4
V
8
V
V
I
CE
C
GE
CE
= 100A ; T
T
(V)
J
= 300V ; V
(V)
=25°C
2
T
9
J
6
=25°C
Eoff
2.5
10
J
GE
= 125°C
GE
T
=15V)
J
8
=15V
=125°C
0.001
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rectangular Pulse Duration (Seconds)
11
3
3.5
Single Pulse
10
12
0.01
250
200
150
100
5
4
3
2
1
0
50
200
175
150
125
100
0
75
50
25
0
APTGF90DH60T3G
0
0
V
V
R
T
0
CE
GE
J
G
V
T
R
T
Energy losses vs Collector Current
= 125°C
25
= 2.2 Ω
J
GE
G
J
= 300V
= 15V
=125°C
0.1
Reverse Safe Operating Area
=2.2 Ω
= 125°C
=15V
100
50
1
Output Characteristics
V
200
GE
75
=20V
I
2
C
V
100 125 150 175 200
(A)
300
CE
V
Eoff
CE
(V)
1
(V)
3
400
V
GE
=15V
IGBT
Eon
V
V
GE
500
GE
4
=9V
=12V
10
600
5
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