FSBB15CH60C Fairchild Semiconductor, FSBB15CH60C Datasheet - Page 5

• Manufacturer Part Number: FSBB15CH60C
• Description: IC POWER MOD SPM 600V SPM27CC
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB15CH60C

• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27CC
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Pd: 55W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To
• Operating Temperature (max): 150C
• Operating Temperature (min): -40C
• Pin Count: 27
• Mounting: Through Hole
• Case Length: 44mm
• Case Height: 5.5mm
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

power density with 3A to 30A rated products built into a single package outline.
DIP SPM series has the 3-N terminal structure with the negative rail IGBT emitters terminated separately.
With this structure, shunt resistance can be placed in series with each 3-N terminal to easily sense individual
inverter phase currents.
1.3 Mini DIP SPM Technology
of the power devices (i.e., IGBTs and FRDs) in the 3-phase inverter circuit. The fundamental design goal is
to reduce the die size and increase the current density of these power devices. The Mini DIP SPM IGBTs
represent Fairchild's latest technology. Through optimized NPT IGBT design, they maintain an SOA (Safe
Operating Area) suitable for motor control application while dramatically reducing the on-state conduction
and turn-off switching losses. They also implement smooth switching performance without sacrificing other
characteristics. The FRDs are Ultrafast diodes that have a low forward voltage drop along with soft recovery
characteristics.
functionality required for low power inverter drives. The HVIC has a built-in high voltage level shift function
2008-03-03
POWER Devices – IGBT and FRD
Control IC – LVIC, HVIC & Bootstrap diode
The third design advantage is design flexibility enabling use in a wide range of applications. The Mini
The Mini DIP SPM performance improvement is primarily the result of the technological advancement
The Mini DIP SPM HVIC and LVIC driver ICs were designed to have only the minimum necessary
The detailed features and integrated functions of Mini DIP SPM are as follows:
• 600V/3A to 30A ratings in one package (with identical mechanical layouts)
• Low-loss efficient IGBTs and FRDs optimized for motor drive applications
• High reliability due to fully tested coordination of HVIC and IGBTs
• 3-phase IGBT Inverter Bridge including control ICs for gate drive and protection
• Single-grounded power supply and opto-coupler-less interface due to built-in HVIC
• Active-High input signal logic resolves the startup and shutdown sequence constraint between the
VCC control supply and control input providing fail-safe operation with direct connection between the
Mini DIP SPM and a 3.3V CPU or DSP. Additional external sequence logic is not needed
• Divided negative DC-link terminals for inverter applications requiring individual phase current
• Easy PCB layout due to built in bootstrap diode
• Isolation voltage rating of 2500Vrms for one minute
• Very low leakage current due to full molded or DBC substrate.
sensing
— High-Side Features: Control circuit under voltage (UV) protection (without fault signal output)
— Low-Side Features: UV, Thermal Shut Down(TSD) and short-circuit (SC) protection
through external shunt resistor (With fault signal output),
V4 Mini DIP SPM Application Note (2008-03-03)
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FAIRCHILD SEMICONDUCTOR - Smart Power Module