FDPF12N50UT Fairchild Semiconductor, FDPF12N50UT Datasheet - Page 3

• Manufacturer Part Number: FDPF12N50UT
• Description: MOSFET N-CH 500V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FDPF12N50UT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1395pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50U / FDPF12N50UT Rev.
Typical Performance Characteristics
2000
1500
1000
500
1.4
1.2
1.0
0.8
0.6
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10
Figure 1. On-Region Characteristics
30
0
1
0.1
0
1
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
5
Drain Current and Gate Voltage
DS
DS
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
10
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
C
C
C
oss
rss
= 10V
iss
*Notes:
15
1. 250
2. T
*Note: T
C
V
= 25
GS
(
µ
C ds = shorted
s Pulse Test
*Note:
= 20V
10
o
1. V
2. f = 1MHz
20
C
10
J
= 25
GS
= 0V
o
C
)
25
30
20
3
100
10
30
10
10
1
Figure 2. Transfer Characteristics
8
6
4
2
0
Figure 4. Body Diode Forward Voltage
1
4.0
Figure 6. Gate Charge Characteristics
0.0
0
V
4.5
SD
0.5
5
, Body Diode Forward Voltage [V]
V
Q
GS
Variation vs. Source Current
and Temperature
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
5.0
150
V
V
V
150
1.0
10
DS
DS
DS
o
C
o
= 100V
= 250V
= 400V
C
5.5
*Notes:
25
1.5
1. V
2. 250
15
*Notes:
1. V
2. 250
o
6.0
C
25
*Note: I
DS
GS
o
µ
C
= 20V
s Pulse Test
µ
= 0V
s Pulse Test
2.0
20
D
6.5
= 10A
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7.0
2.5
25