FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet

MOSFET N-CH 600V TO-220F-3

FDPF10N60ZUT

Manufacturer Part Number
FDPF10N60ZUT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF10N60ZUT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1980pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
9 A
Power Dissipation
42 W
Forward Transconductance Gfs (max / Min)
12.5 S
Gate Charge Qg
31 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
Features
• R
• Low gate charge ( Typ. 31nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
G D S
rss
= 0.65Ω ( Typ.)@ V
( Typ. 15pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 4.5A
T
C
Parameter
= 25
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
G
o
= 25
C unless otherwise noted*
D
o
S
C)
C
C
= 25
= 100
o
1
C
TO-220F
FDPF Series
o
C)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
FDP10N60ZU FDPF10N60ZUT
FDP10N60ZU FDPF10N60ZUT Units
G
G
1.45
180
62.5
5.4
36
0.7
0.5
9
-55 to +150
600
±30
100
300
18
20
9
D
D
S
S
UniFET
62.5
5.4*
36*
0.3
3.0
42
9*
April 2009
-
www.fairchildsemi.com
switching
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
tm
TM
C

Related parts for FDPF10N60ZUT

FDPF10N60ZUT Summary of contents

Page 1

... Pulsed (Note 1) (Note 2) (Note 1) (Note Derate above 25 C Parameter 1 April 2009 UniFET FDP10N60ZU FDPF10N60ZUT 600 ± 5.4 5.4* 36 36* 100 (Note 180 42 1.45 0.3 -55 to +150 300 FDP10N60ZU FDPF10N60ZUT Units 0.7 3.0 0.5 - 62.5 62.5 www.fairchildsemi.com TM tm switching Units V/ C/W ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 2mH 10A 50V 25Ω, Starting ≤ 10A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP10N60ZU/FDPF10N60ZUT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

Page 3

... D Figure 5. Capacitance Characteristics 3000 C iss = shorted oss = oss 2500 C rss = C gd 2000 C iss 1500 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N60ZU/FDPF10N60ZUT Rev. A Figure 2. Transfer Characteristics μ s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V Note : Figure 6. Gate Charge Characteristics * Note: 1 ...

Page 4

... T , Junction Temperature [ J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature [ C Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP10N60ZU/FDPF10N60ZUT Rev. A (Continued) Figure 8. Maximum Safe Operating Area 100 10 1 0.1 * Notes : μ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDP10N60ZU/FDPF10N60ZUT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP10N60ZU/FDPF10N60ZUT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP10N60ZU/FDPF10N60ZUT Rev. A TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 #1 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP10N60ZU/FDPF10N60ZUT Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N60ZU/FDPF10N60ZUT Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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