FDPF10N60ZUT Fairchild Semiconductor, FDPF10N60ZUT Datasheet - Page 4

• Manufacturer Part Number: FDPF10N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1980pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 42 W
• Forward Transconductance Gfs (max / Min): 12.5 S
• Gate Charge Qg: 31 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60ZU/FDPF10N60ZUT Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
10
1.2
1.1
1.0
0.9
0.8
8
6
4
2
0
-100
25
vs. Temperaure
-50
vs. Case Temperature
50
T
T
C
J
, Case Temperature [
, Junction Temperature [
0
0.01
Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT
0.1
75
1
5
10
-4
50
Single pulse
0.5
0.05
0.02
0.01
0.2
0.1
100
100
10
o
C]
-3
* Notes :
1. V
2. I
125
o
C]
D
150
GS
= 250
= 0V
10
μ
-2
Rectangular Pulse Duration [sec]
A
150
200
(Continued)
10
-1
4
0.01
100
0.1
1
10
Figure 8. Maximum Safe Operating Area
1
1
Operation in This Area
is Limited by R
* Notes :
P
1. Z
2. Duty Factor, D=t
3. T
DM
10
θ
JM
JC
V
DS
- T
(t) = 3.0
* Notes :
- FDPF10N60ZUT
, Drain-Source Voltage [V]
1. T
2. T
3. Single Pulse
C
t
1
10
= P
DS(on)
t
2
C
J
o
DM
10
= 150
= 25
C/W Max.
2
* Z
1
o
/t
C
o
θ
2
JC
C
(t)
10
DC
100
3
10ms
1ms
100
20
μ
s
μ
s
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