FDPF16N50UT Fairchild Semiconductor, FDPF16N50UT Datasheet - Page 4

• Manufacturer Part Number: FDPF16N50UT
• Description: MOSFET N-CH 500V 15A TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF16N50UT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.37 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 38.5 W
• Forward Transconductance Gfs (max / Min): 23 S
• Gate Charge Qg: 32 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP16N50U / FDPF16N50UT Rev.
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
15
10
5
0
25
1.2
1.1
1.0
0.9
0.8
-100
50
-50
vs. Temperature
vs. Case Temperature - FDPF16N50UT
T
T
C
J
, Case Temperature [
, Junction Tem perature [
0
75
10
10
Figure 10. Transient Thermal Response Curve - FDPF16N50UT
10
-1
-2
10
0
50
-5
D=0.5
100
0.05
0.01
0.02
0.2
0.1
o
100
C]
o
C]
10
* Notes :
single pulse
1. V
2. I
-4
125
D
G S
t Square W ave Pulse Duration [sec]
= 250
150
= 0 V

A
10
150
200
-3
(Continued)
10
-2
4
10
10
10
10
10
-1
-2
Figure 8. Maximum Safe Operating Area
2
1
0
10
0
10
* Notes :
P
-1
1. Z
2. Duty Factor, D=t
3. T
DM
Operation in This Area
is Limited by R

JM
JC
(t) = 3.3
- T
C
= P
t
- FDPF16N50UT
1
V
10
DS(on)
t
DS
2
DM
o
0
C/W Max.
, Drain-Source Voltage [V]
10
* Z
1
1

/t
JC
2
(t)
10
1
DC
100 ms
* Notes :
1. T
2. T
3. Single Pulse
10 ms
10
C
J
2
= 150
= 25
1 ms
o
100
C
o
C

10
s

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