IPA60R600E6 Infineon Technologies, IPA60R600E6 Datasheet - Page 12
![MOSFET N-CH 600V 7.3A TO220](/photos/16/8/160876/to-220fullpak_sml.jpg)
IPA60R600E6
Manufacturer Part Number
IPA60R600E6
Description
MOSFET N-CH 600V 7.3A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R600E6.pdf
(17 pages)
Specifications of IPA60R600E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
3.5V @ 200µA
Gate Charge (qg) @ Vgs
20.5nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 100V
Power - Max
28W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
600.0 mOhm
Id(max) @ Tc=25°c
7.3 A
Idpuls (max)
19.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R600E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
FinalData Sheet
Table 18
Table 19
Typ. capacitances
C=f(V
Forward characteristics of reverse diode
I
F
=f(V
DS
SD
); parameter: T
); V
GS
=0 V; f=1 MHz
j
12
Typ.
E
OSS
=f(V
C
600V CoolMOS™ E6 Power Transistor
oss
DS
stored energy
)
Electrical characteristics diagrams
Rev. 2.0, 2010-04-12
IPx60R600E6