IPA60R600E6 Infineon Technologies, IPA60R600E6 Datasheet - Page 13
![MOSFET N-CH 600V 7.3A TO220](/photos/16/8/160876/to-220fullpak_sml.jpg)
IPA60R600E6
Manufacturer Part Number
IPA60R600E6
Description
MOSFET N-CH 600V 7.3A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R600E6.pdf
(17 pages)
Specifications of IPA60R600E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
3.5V @ 200µA
Gate Charge (qg) @ Vgs
20.5nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 100V
Power - Max
28W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
600.0 mOhm
Id(max) @ Tc=25°c
7.3 A
Idpuls (max)
19.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R600E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
6
Table 20
Table 21
Table 22
FinalData Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
13
V
V
GS
DS
V
DS
600V CoolMOS™ E6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.0, 2010-04-12
t
f
V
(BR)DS
IPx60R600E6
Test circuits
V
DS