IPA60R600E6 Infineon Technologies, IPA60R600E6 Datasheet - Page 2
![MOSFET N-CH 600V 7.3A TO220](/photos/16/8/160876/to-220fullpak_sml.jpg)
IPA60R600E6
Manufacturer Part Number
IPA60R600E6
Description
MOSFET N-CH 600V 7.3A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R600E6.pdf
(17 pages)
Specifications of IPA60R600E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
3.5V @ 200µA
Gate Charge (qg) @ Vgs
20.5nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 100V
Power - Max
28W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
600.0 mOhm
Id(max) @ Tc=25°c
7.3 A
Idpuls (max)
19.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R600E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
600V CoolMOS™ E6 Power Transistor
1
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the
gate or separate totem poles is generally recommended.
Table 1
1) J-STD20 and JESD22
FinalData Sheet
Parameter
V
R
Q
I
E
Body diode d
Type / Ordering Code
IPD60R600E6
IPP60R600E6
IPA60R600E6
D,pulse
DS
oss
DS(on),max
g,typ
Extremely low losses due to very low FOM R
Very high commutation ruggedness
Easy to use/drive
JEDEC
TO-252)
@
@ 400V
T
j,max
1)
Description
Key Performance Parameters
qualified, Pb-free plating, halogen free (excluding
i
/d
t
Value
650
0.6
20.5
19
1.9
500
Package
PG-TO252
PG-TO220
PG-TO220 FullPAK
Unit
V
nC
A
µJ
A/µs
dson
*Q
g
2
and E
oss
6R600E6
Marking
IPD60R600E6, IPP60R600E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
gate
pin 1
Rev. 2.0, 2010-04-12
IPD60R600E6
drain
pin 2
source
pin 3