BSM75GAR120DN2 Infineon Technologies, BSM75GAR120DN2 Datasheet - Page 4

• Manufacturer Part Number: BSM75GAR120DN2
• Description: IGBT Transistors 1200V 100A GAR CH
• Manufacturer: Infineon Technologies

Specifications of BSM75GAR120DN2

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Package / Case: 34MM
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 3V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 75 GAL 120 DN2
Electrical Characteristics, at T
Parameter
Chopper Diode
Chopper diode forward voltage
I
I
Reverse recovery time, chopper
I
di
Reverse recovery charge, chopper
I
di
T
T
FC
FC
FC
FC
j
j
F
F
= 25 °C
= 125 °C
/dt = -1000 A/µs, T
/dt = -1000 A/µs
= 100 A, V
= 100 A, V
= 100 A, V
= 100 A, V
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
= 0 V
= 0 V
j
= 25 °C, unless otherwise specified
4
Symbol
V
t
Q
rrC
FC
rrC
min.
-
-
-
-
-
Values
typ.
2
1.8
0.125
4
14
max.
-
-
-
-
2.5
Nov-24-1997
Unit
V
µs
µC