BSM75GAR120DN2 Infineon Technologies, BSM75GAR120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM75GAR120DN2
• Description: IGBT Transistors 1200V 100A GAR CH
• Manufacturer: Infineon Technologies

Specifications of BSM75GAR120DN2

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 105 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 150 C
• Package / Case: 34MM
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 105A
• Collector Emitter Voltage Vces: 3V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Ic (max): 75.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Update of Drawing Sep-21-98
IGBT-Module
IGBT-Modules
GAL type
GAR type
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only