FDPF10N60NZ Fairchild Semiconductor, FDPF10N60NZ Datasheet - Page 3

• Manufacturer Part Number: FDPF10N60NZ
• Description: MOSFET N-CH 600V 10A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF10N60NZ

• Input Capacitance (ciss) @ Vds: 1475pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60NZ / FDPF10N60NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
4000
1000
Figure 1. On-Region Characteristics
0.5
100
30
10
1.0
0.9
0.8
0.7
0.6
0.5
10
1
1
0.5
10
0
V
-1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
= 15.0V
Drain Current and Gate Voltage
10.0V
8.0V
7.0V
6.0V
5.5V
V
V
DS
DS
1
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
5
I
D
, Drain Current [A]
(
C ds = shorted
1
V
GS
10
= 10V
*Notes:
V
1. 250
2. T
GS
)
= 20V
C
*Note: T
= 25

s Pulse Test
C
C
C
*Note:
15
o
oss
iss
rss
C
1. V
2. f = 1MHz
10
C
GS
= 25
= 0V
o
C
10
20
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
100
0.1
0.1
10
10
10
8
6
4
2
0
1
1
0.2
0
2
V
0.4
Variation vs. Source Current
SD
and Temperature
5
, Body Diode Forward Voltage [V]
V
Q
150
4
GS
g
V
V
V
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
o
DS
DS
DS
0.6
C
o
= 120V
= 300V
= 480V
C
10
-55
0.8
25
6
o
o
C
25
*Notes:
C
1. V
2. 250
o
15
C
*Notes:
1. V
2. 250
DS
1.0
*Note: I
GS

= 20V
s Pulse Test

8
= 0V
s Pulse Test
20
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D
1.2
= 10A
10
1.4
25