FDPF10N60NZ Fairchild Semiconductor, FDPF10N60NZ Datasheet - Page 5

• Manufacturer Part Number: FDPF10N60NZ
• Description: MOSFET N-CH 600V 10A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF10N60NZ

• Input Capacitance (ciss) @ Vds: 1475pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N60NZ / FDPF10N60NZ Rev. A
Typical Performance Characteristics
0.001
0.01
0.005
0.1
0.01
5
1
10
0.1
2
1
Figure 12. Transient
Figure 13. Transient
-5
10
0.01
0.05
0.02
0.5
0.2
0.1
Single pulse
-5
0.05
0.02
0.01
0.2
0.5
0.1
Single pulse
10
-4
10
-4
-FDP10N60NZ
-FDPF10N60NZ
Rectangular Pulse Duration [sec]
10
Rectangular Pulse Duration [sec]
(Continued)
10
-3
-3
Thermal
Thermal
10
5
10
-2
-2
Response Curve
Response Curve
10
*Notes:
1. Z
2. Duty Factor, D= t
3. T
-1
10
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
P
-1
DM

JM
DM
JC

JM
(t) = 3.3
- T
JC
C
(t) = 0.68
- T
= P
C
t
1
t
= P
1
t
1
DM
2
o
t
C/W Max.
2
1
DM
* Z
o
C/W Max.
1
* Z

/t
JC
2
1

/t
(t)
JC
2
(t)
10
10
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