FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet
FGH25N120FTDS
Specifications of FGH25N120FTDS
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FGH25N120FTDS Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation Rev. A FGH25N120FTDS General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- = 25A C mances, and easy parallel operation with exceptional avalanche ruggedness ...
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... E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc Rev. A FGH25N120FTDS Package Eco Status TO-3PN RoHS T = 25°C unless otherwise noted C Test Conditions = 0V 250µ CES GE ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH25N120FTDS Rev 25°C unless otherwise noted C Test Conditions Min 25A 125 125 25A di/dt = 200A/µs ...
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... 125 Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter V = 15V GE 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T Rev. A FGH25N120FTDS Figure 2. Typical Output Characteristics 180 150 12V 120 90 10V [V] CE Figure 4. Transfer Characteristics 120 100 [V] CE Figure 6. Saturation Voltage vs. V ...
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... C res 0 1 Collector-Emitter Voltage, V Figure 11. SOA Characteristics Gate Resistance 200 100 10 1 *Notes: 0 150 Single Pulse 0. Collector-Emitter Voltage, V Rev. A FGH25N120FTDS Figure 8. Load Current vs. Frequency GE 140 Common Emitter 125 C 120 C 100 [V] GE Figure 10. Gate Charge Characteristics Common Emitter 1MHz ...
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... Collector Current, I Figure 17. Switching Loss vs. Collector Current 10 Common Emitter Ω 15V 125 0 Collector Current, I Rev. A FGH25N120FTDS Figure 14. Turn-on Characteristics vs. 100 Ω Figure 16. Switching Loss vs. Gate Resistance Common Emitter Ω 15V 125 [A] C Figure 18. Turn off Switing SOA Characteristics 100 E ...
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... Forward Current, I Figure 23. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 1E-5 FGH25N120FTDS Rev. A Figure 20. Reverse Recovery Current 125 [V] F Figure 22. Reverse Recovery Time 1200 1000 800 600 400 ...
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... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) Rev. A FGH25N120FTDS 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH25N120FTDS Rev. A PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...