FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet - Page 7

• Manufacturer Part Number: FGH25N120FTDS
• Description: IGBT 1200V 25A FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH25N120FTDS

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH25N120FTDS Rev. A
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 21. Stored Charge
2.0
1.5
1.0
0.5
0.0
0.1
30
10
1
10
0
T
J
= 125
20
Forward Current, I
o
Forward Voltage, V
C
200A/
di/dt = 100A/
0.001
1
0.01
0.1
µ
s
1
1E-5
T
J
0.05
0.02
0.01
single pulse
Figure 23. Transient Thermal Impedance of IGBT
0.2
0.1
30
0.5
= 25
µ
s
o
C
F
[A]
2
F
0.0001
[V]
T
T
C
C
40
= 25
= 125
o
C
o
C
Rectangular Pulse Duration [sec]
0.001
50
3
Figure 20. Reverse Recovery Current
7
0.01
Figure 22. Reverse Recovery Time
1200
1000
800
600
400
7
6
5
4
3
2
0.1
10
10
Peak T
Duty Factor, D = t1/t2
P
DM
j
= Pdm x Zthjc + T
20
Forward Current, I
Forward Current, I
t
1
1
200A/
di/dt = 100A/
t
2
20
di/dt = 100A/
µ
200A/
s
30
µ
C
µ
s
10
s
µ
s
F
F
30
[A]
[A]
40
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40
50