FGH25N120FTDS Fairchild Semiconductor, FGH25N120FTDS Datasheet - Page 3

• Manufacturer Part Number: FGH25N120FTDS
• Description: IGBT 1200V 25A FIELD STOP TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH25N120FTDS

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 313W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH25N120FTDS Rev. A
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Parameter
I
I
di/dt = 200A/µs
F
ES
= 25A
= 25A,
Test Conditions
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Min.
-
-
-
-
-
-
-
-
Typ.
496
411
2.5
2.3
5.2
6.9
1.1
1.7
Max
1.82
535
3.5
6.8
www.fairchildsemi.com
-
-
-
-
Units
µC
ns
V
A