FGH40N60SMDF Fairchild Semiconductor, FGH40N60SMDF Datasheet - Page 2

IGBT 600V 40A TO-247

FGH40N60SMDF

Manufacturer Part Number
FGH40N60SMDF
Description
IGBT 600V 40A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGH40N60SMDF

Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
80A
Power - Max
349W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGH40N60SMDF
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FGH40N60SMDF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FGH40N60SMDF Rev. B1
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
R
R
R
Off Characteristics
BV
ΔBV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Device Marking
Symbol
d(on)
d(off)
f
d(on)
d(off)
f
CES
GES
r
r
GE(th)
CE(sat)
on
off
ts
on
off
ts
θJC
θJC
θJA
FGH40N60SMDF
ies
oes
res
ΔT
Symbol
CES
CES
(IGBT)
(Diode)
J
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FGH40N60SMDF
Parameter
Device
Parameter
Package
TO-247
V
V
V
I
I
I
T
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
C
C
C
C
GE
GE
CE
GE
CE
CC
G
CC
G
= 40A
= 40A
= 250μA, V
= 175
= 6Ω, V
= 6Ω, V
= 30V
= 0V, I
= 0V, I
= V
= V
= 400V, I
= 400V, I
Test Conditions
T
C
CES
GES
,
,
o
V
V
= 25°C unless otherwise noted
C
,
2
GE
GE
C
C
GE
GE
V
, V
, V
GE
= 250μA
= 250μA
C
C
CE
= 15V
= 15V,
= 15V,
= 15V,
GE
CE
= 40A,
= 40A,
= 0V,
= V
C
C
Reel Size
= 0V
= 0V
= 25
= 175
GE
-
o
C
o
C
Typ.
-
-
-
Min.
Tape Width
600
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
Typ.
1880
0.43
1.45
0.26
1.56
180
116
0.6
4.5
1.9
2.1
1.3
2.1
0.6
2.7
40
50
12
20
92
13
15
22
16
-
-
-
Max.
±400
0.34
2.34
250
120
6.0
2.5
2.0
16
28
17
-
-
-
-
-
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Units
30
o
o
o
C/W
C/W
C/W
Units
V/
mJ
mJ
mJ
mJ
mJ
mJ
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
o
C

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