FGH40N60SMDF Fairchild Semiconductor, FGH40N60SMDF Datasheet - Page 6

IGBT 600V 40A TO-247

FGH40N60SMDF

Manufacturer Part Number
FGH40N60SMDF
Description
IGBT 600V 40A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGH40N60SMDF

Igbt Type
Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
80A
Power - Max
349W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
175C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGH40N60SMDF
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FGH40N60SMDF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FGH40N60SMDF Rev. B1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs.
1000
1000
100
100
0.1
10
10
1
6
1
1
20
20
0
Collector Current
Gate Resistance
Collector Current
30
30
10
t
d(off)
t
Gate Resistance, R
f
Collector Current, I
Collector Current, I
40
40
E
on
20
E
off
50
50
Common Emitter
V
I
T
T
C
CC
C
C
Common Emitter
V
T
T
30
= 40A
GE
C
C
= 25
= 175
Common Emitter
V
T
T
G
= 400V, V
= 25
= 175
C
t
GE
C
C
60
t
60
d(off)
C
= 15V, R
f
[
[A]
= 25
= 175
Ω
o
[A]
= 15V, R
C
o
]
o
C
C
o
o
C
C
o
40
C
GE
G
70
70
= 6
G
= 15V
= 6
Ω
Ω
80
80
50
6
1000
100
200
100
Figure 14. Turn-on Characteristics vs.
Figure 16. Switching Loss vs.
0.1
10
10
Figure 18. Turn off Switching
1
1
5
1
20
0
1
Common Emitter
V
T
T
C
C
GE
= 25
= 175
= 15V, R
30
Collector-Emitter Voltage, V
10
o
C
o
E
C
E
Collector Current, I
Gate Resistance
Collector Current
on
off
Gate Resistance, R
SOA Characteristics
Safe Operating Area
V
G
GE
40
10
= 6
= 15V, T
Ω
20
50
C
Common Emitter
V
I
T
T
C
= 175
C
C
CC
= 40A
30
= 25
= 175
= 400V, V
C
100
o
60
G
C
[A]
o
C
[
o
t
Ω
t
C
r
d(on)
]
CE
40
GE
[V]
70
= 15V
www.fairchildsemi.com
1000
80
50

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