FGH40N60SMDF Fairchild Semiconductor, FGH40N60SMDF Datasheet - Page 7

• Manufacturer Part Number: FGH40N60SMDF
• Description: IGBT 600V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N60SMDF

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 349W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH40N60SMDF Rev. B1
Typical Performance Characteristics
Figure 19. Current Derating
Figure 21. Forward Characteristics
Figure 23. Stored Charge
2750
2500
2250
2000
1750
1500
1250
1000
100
750
500
250
90
80
70
60
50
40
30
20
10
10
0
1
25
0
0
T
T
Collector-EmitterCase Temperature, T
C
C
= 25
= 175
5
50
0.5
o
C
di/dt = 200A/
o
10
C
T
C
Forward Voltage, V
Forwad Current, I
= 175
75
15
1.0
o
C
μ
20
s
100
T
C
25
= 25
1.5
di/dt = 100A/
Common Emitter
V
o
F
125
C
GE
30
[A]
F
[V]
= 15V
T
T
C
C
35
= 25
= 175
2.0
150
o
μ
C
C
o
s
40
[
C
o
C]
175
2.5
45
7
0.001
1000
120
110
100
Figure 22. Reverse Current
0.01
400
350
300
250
200
150
100
Figure 20. Load Current Vs. Frequency
100
90
80
70
60
50
40
30
20
10
0.1
50
10
0
Figure 24. Reverse Recovery Time
0
1
1k
0
0
T
T
C
C
= 25
= 175
5
100
o
C
o
Tc = 100
10
C
Switching Frequency, f [Hz]
di/dt = 200A/
Forward Current, I
Reverse Voltage,V
10k
200
15
o
C
Square Wave
T
V
J
GE
T
< 175
T
T
20
C
C
= 15/0V, R
C
μ
= 150
s
= 75
= 25
300
Tc = 75
o
25
C, D = 0.5, V
o
o
o
C
C
C
di/dt = 100A/
o
100k
F
G
C
R
400
30
[A]
= 6
[V]
Ω
CE
35
= 400V
500
μ
s
40
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1M
600
45