AT90USB647-MU Atmel, AT90USB647-MU Datasheet - Page 28

• Manufacturer Part Number: AT90USB647-MU
• Description: MCU, 8BIT, 64K FLASH, USB, 64QFN
• Manufacturer: Atmel

Specifications of AT90USB647-MU

• Controller Family/series: AT90
• No. Of I/o's: 48
• Eeprom Memory Size: 2KB
• Ram Memory Size: 4KB
• Cpu Speed: 16MHz
• No. Of: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 64KB
• Oscillator Type: External, Internal
• Package: 64QFN EP
• Device Core: AVR
• Family Name: AT90
• Maximum Speed: 20 MHz
• Ram Size: 4 KB
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 48
• Interface Type: SPI/TWI/USART/USB
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 4
• Lead Free Status / Rohs Status: Details

5.3.5
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AT90USB64/128
Preventing EEPROM Corruption
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
be used. If a reset occurs while a write operation is in progress, the write operation will be com-
pleted provided that the power supply voltage is sufficient.
Assembly Code Example
C Code Example
EEPROM_read:
unsigned char EEPROM_read(unsigned int uiAddress)
{
}
; Wait for completion of previous write
sbic EECR,EEPE
rjmp EEPROM_read
; Set up address (r18:r17) in address register
out EEARH, r18
out EEARL, r17
; Start eeprom read by writing EERE
sbi EECR,EERE
; Read data from Data Register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
/* Set up address register */
EEAR = uiAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from Data Register */
return EEDR;
1. See “About Code Examples” on page 9.
;
r16,EEDR
(1)
CC,
(1)
the EEPROM data can be corrupted because the supply voltage is
CC
reset Protection circuit can
7593K–AVR–11/09