AT90USB647-MU Atmel, AT90USB647-MU Datasheet - Page 396

• Manufacturer Part Number: AT90USB647-MU
• Description: MCU, 8BIT, 64K FLASH, USB, 64QFN
• Manufacturer: Atmel

Specifications of AT90USB647-MU

• Controller Family/series: AT90
• No. Of I/o's: 48
• Eeprom Memory Size: 2KB
• Ram Memory Size: 4KB
• Cpu Speed: 16MHz
• No. Of: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 64KB
• Oscillator Type: External, Internal
• Package: 64QFN EP
• Device Core: AVR
• Family Name: AT90
• Maximum Speed: 20 MHz
• Ram Size: 4 KB
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 48
• Interface Type: SPI/TWI/USART/USB
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 4
• Lead Free Status / Rohs Status: Details

29.9.18
29.9.19
29.9.20
396
AT90USB64/128
Programming the EEPROM
Reading the EEPROM
Programming the Fuses
Before programming the EEPROM a Chip Erase must be performed, see “Performing Chip
Erase” on page 395.
Note that the PROG_PAGELOAD instruction can not be used when programming the EEPROM.
Note that the PROG_PAGEREAD instruction can not be used when reading the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Flash read using programming instruction 3a.
3. Load the page address using programming instructions 3b, 3c and 3d. PCWORD (refer
4. Enter JTAG instruction PROG_PAGEREAD.
5. Read the entire page (or Flash) by shifting out all instruction words in the page (or
6. Enter JTAG instruction PROG_COMMANDS.
7. Repeat steps 3 to 6 until all data have been read.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM write using programming instruction 4a.
3. Load address High byte using programming instruction 4b.
4. Load address Low byte using programming instruction 4c.
5. Load data using programming instructions 4d and 4e.
6. Repeat steps 4 and 5 for all data bytes in the page.
7. Write the data using programming instruction 4f.
8. Poll for EEPROM write complete using programming instruction 4g, or wait for t
9. Repeat steps 3 to 8 until all data have been programmed.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM read using programming instruction 5a.
3. Load address using programming instructions 5b and 5c.
4. Read data using programming instruction 5d.
5. Repeat steps 3 and 4 until all data have been read.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Fuse write using programming instruction 6a.
3. Load data high byte using programming instructions 6b. A bit value of “0” will program
4. Write Fuse High byte using programming instruction 6c.
5. Poll for Fuse write complete using programming instruction 6d, or wait for t
to
0.
Flash), starting with the LSB of the first instruction in the page (Flash) and ending with
the MSB of the last instruction in the page (Flash). The Capture-DR state both captures
the data from the Flash, and also auto-increments the program counter after each word
is read. Note that Capture-DR comes before the shift-DR state. Hence, the first byte
which is shifted out contains valid data.
(refer to
the corresponding fuse, a “1” will unprogram the fuse.
Table 29-13 on page
Table 29-11 on page
Table 29-13 on page
380).
371) is used to address within one page and must be written as
380).
WLRH
7593K–AVR–11/09
(refer to
WLRH