BSP315P Infineon Technologies, BSP315P Datasheet - Page 5

• Manufacturer Part Number: BSP315P
• Description: P CH MOSFET, -60V, 1.17A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP315P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.17A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,400.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
Rev.1.3
tot
= f ( V
-10
-10
-10
-10
W
A
= f ( T
1.9
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
1
0
-10
0
BSP 315 P
BSP 315 P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 280.0µs
A
DS
160
1 ms
10 ms
-10
2
Page 5
Drain current
I
parameter : V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
-1.3
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
10
10
10
A
0.0
-1
-2
= f ( t
2
1
0
10
0
A
BSP 315 P
BSP 315 P
-5
)
10
20
p
single pulse
)
-4
GS
10
40
-3
p
10
/ T
60
10V
-2
10
80
-1
10
100
0
10
BSP 315 P
1
120
2005-11-23
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4