BSP315P Infineon Technologies, BSP315P Datasheet - Page 8

• Manufacturer Part Number: BSP315P
• Description: P CH MOSFET, -60V, 1.17A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP315P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.17A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,400.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
Rev.1.3
(BR)DSS
GS
mJ
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
25
15
10
= 25
5
0
-60
25
BSP 315 P
= f ( T
45
-20
D
= -1.17 A , V
j
)
65
20
85
AS
60
= f ( T
105
DD
100
j
125
)
= -25 V
°C
°C
T
T
j
j
165
180
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0.0
BSP 315 P
1.0
Gate
D
0,2
= -1.17 A pulsed
2.0
)
V
DS max
3.0
4.0
5.0
0,8
BSP 315 P
6.0
2005-11-23
V
DS max
nC
Q
Gate
8.0