BSP315P Infineon Technologies, BSP315P Datasheet - Page 6

• Manufacturer Part Number: BSP315P
• Description: P CH MOSFET, -60V, 1.17A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP315P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.17A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,400.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
V
parameter: t
D
Rev.1.3
DS
= f ( V
-2.8
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-3.0
-2.0
-1.5
-1.0
-0.5
A
0.0
A
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.0
2 x I
BSP 315 P
DS
P
tot
D
)
= 2W
-1.0
p
x R
p
= 80 µs
= 80 µs
l
i
k
DS(on)max
j
h
-2.0
g
f
e
-3.0
-4.0
D
c
a
= f ( V
d
b
V GS [V]
a
b
c
d
e
f
g
h
i
j
k
l
V
V
V
V
-10.0
GS
DS
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
GS
-6.0
-5.0
)
Page 6
Typ. drain-source-on-resistance
R
parameter: V
Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
S
2.6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.5
1.5
1.0
0.5
0.0
0.0
0.0
D
BSP 315 P
V
a
= f ( I
-2.5
GS
); T
a
[V] =
-0.4
-3.0
0.5
b
j
=25°C
D
fs
GS
)
-3.5
c
-0.8
b
-4.0
1.0
d
-4.5
e
-1.2
-5.0
1.5
f
c
-5.5
g
-1.6
-6.0
2.0
h
BSP 315 P
-6.5
2005-11-23
i
-2.0
-7.0
A
j
d
k
A
I
I
i
e
g
D
D
-8.0
l
j
k
h
f
-10.0
-2.6
3.0
l