2N5551 Fairchild Semiconductor, 2N5551 Datasheet
2N5551
Specifications of 2N5551
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2N5551 Summary of contents
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... MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means h 180~240 in 2N5551 ( FE Absolute Maximum Ratings * ...
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... Noise Figure Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) 2N5551- MMBT5551 Rev 25°C unless otherwise noted a ...
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... 0.8 0.6 0.4 0.2 0 COLLECTOR CURRENT (mA) C Figure 5. Collector Cutoff Current vs Ambient Temperature 100V AMBIE NT TEMP ERATURE ( C) A 2N5551- MMBT5551 Rev. B Figure 2. Collector-Emitter Saturation Voltage 0.5 0.4 0.3 0.2 0.1 0 100 1 Figure 4. Base-Emitter On Voltage 1.0 0 0.6 o 125 C 0.4 0.2 0.0 ...
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... RESISTANCE (k ) Figure 9. Power Dissipation vs Ambient Temperature 700 600 500 TO-92 SOT-23 400 300 200 100 TEMPERATURE ( C) 2N5551- MMBT5551 Rev. B (Continued) Figure 8. Small Signal Current Gain vs Collector Current 1.0 mA FREG = 20 MHz 100 1000 Ω 100 125 150 Collector Current ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete 2N5551- MMBT5551 Rev. B ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ QFET MicroPak™ ...