2N5551 Fairchild Semiconductor, 2N5551 Datasheet - Page 3

• Manufacturer Part Number: 2N5551
• Description: TRANSISTOR, NPN, TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5551

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 160V
• Power Dissipation Pd: 625mW
• Dc Collector Current: 600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-92
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 80
• Rohs Compliant: Yes

2N5551- MMBT5551 Rev. B
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
Figure 3. Base-Emitter Saturation Voltage
Figure 5. Collector Cutoff Current
250
200
150
100
50
1.0
0.8
0.6
0.4
0.2
0.0
0
50
10
0.1
1
25
1
V
vs Collector Current
vs Collector Current
vs Ambient Temperature
0.2
β
CE
V = 100V
CB
= 10
= 5V
I
C
T - AMBIE NT TEMP ERATURE ( C)
I
C
A
0.5
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
50
1
125
25
o
- 40
o
-40
C
C
2
10
o
o
C
C
75
25
o
C
5
125
10
o
100
C
20
°
100
50
125
100
200
3
Figure 2. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Figure 6. Input and Output Capacitance
1.0
0.8
0.6
0.4
0.2
0.0
0.5
0.4
0.3
0.2
0.1
0.0
30
25
20
15
10
5
0
0.1
0.1
1
vs Collector Current
vs Collector Current
vs Reverse Voltage
β
= 10
I
V
I
- 40
C
C
CE
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
- COLLECTOR VOLTAGE (V)
o
C
125
1
1
o
C
25
10
o
C
125
10
C
10
25
ib
o
C
f = 1.0 MHz
o
C
- 40
V
o
C
CE
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100
C
= 5V
100
cb
100