2N5551 Fairchild Semiconductor, 2N5551 Datasheet - Page 4

• Manufacturer Part Number: 2N5551
• Description: TRANSISTOR, NPN, TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5551

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 160V
• Power Dissipation Pd: 625mW
• Dc Collector Current: 600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-92
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 80
• Rohs Compliant: Yes

2N5551- MMBT5551 Rev. B
Typical Performance Characteristics
Figure 7. Collector- Emitter Breakdown Voltage
Figure 9. Power Dissipation
260
240
220
200
180
160
700
600
500
400
300
200
100
0
0.1
0
with Resistance Between Emitter-Base
SOT-23
vs Ambient Temperature
Between Emitter-Base
25
1
RESISTANCE (k )
TEMPERATURE ( C)
50
TO-92
10
75
Ω
100
o
I
C
100
= 1.0 mA
125
1000
150
(Continued)
4
Figure 8. Small Signal Current Gain
16
12
8
4
0
1
FREG = 20 MHz
V
vs Collector Current
CE
= 10V
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
10
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50