BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet

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BSM100GD120DLC

Manufacturer Part Number
BSM100GD120DLC
Description
IGBT Modules 1200V 100A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.BSM100GD120DLC.pdf (9 pages)

Specifications of BSM100GD120DLC

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
160 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
650 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 3A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM100GD120DLC
Manufacturer:
EUPEC
Quantity:
25
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM100GD120DLC
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM100GD120DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM100GD120DLC
Quantity:
50
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: M. Hierholzer
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 09.09.1999
revision: 2
BSM100GD120DLC
P
P
C
C
C
V
C
C
C
R
CE
CE
CE
= 1 ms, T
= 1 ms
GE
=25°C, Transistor
= 100A, V
= 100A, V
= 4mA, V
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
vj
vj
= 10ms, T
C
CE
GE
GE
GE
= 25°C,V
= 25°C,V
= 80°C
= V
= 20V, T
= 15V, T
= 15V, T
GE
GE
GE
= 0V, T
= 0V, T
, T
Vj
CE
CE
vj
vj
= 125°C
vj
vj
= 25V, V
= 25V, V
= 25°C
= 25°C
= 25°C
= 125°C
vj
vj
1(8)
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C,nom.
I
I
I
C
C
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
C
ies
res
tot
F
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1200
typ.
1,71
0,42
100
160
200
650
100
200
500
2,5
2,1
2,4
5,5
1,1
6,5
10
-
Seriendatenblatt_BSM100GD120DLC.xls
max.
500
400
2,6
2,9
6,5
-
-
-
-
kA
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V
C
A
A
2
s

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BSM100GD120DLC Summary of contents

Page 1

... V 1200 V CES I 100 A C,nom. I 160 200 A CRM P 650 W tot V +/- 20V V GES I 100 200 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE( ies res 500 A CES - 500 - 400 nA GES Seriendatenblatt_BSM100GD120DLC.xls ...

Page 2

... mWs mWs off I - 650 - sCE CC‘+EE‘ min. typ. max 1,8 2 1,7 2 125 - 155 - µ µ mWs rec - 9 - mWs Seriendatenblatt_BSM100GD120DLC.xls ...

Page 3

... This technical information specifies semiconductor devices but promises no characteristics valid in combination with the belonging technical notes. BSM100GD120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = Paste grease screw M5 3(8) min. typ. max 0,19 K/W thJC - - 0,36 K 0,009 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 225 300 g Seriendatenblatt_BSM100GD120DLC.xls ...

Page 4

... Output characteristic (typical) 200 180 VGE = 17V 160 VGE = 15V VGE = 13V 140 VGE = 11V VGE = 9V 120 VGE = 7V 100 0,0 0,5 1,0 BSM100GD120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 Seriendatenblatt_BSM100GD120DLC.xls ...

Page 5

... Transfer characteristic (typical) 200 180 160 140 120 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 200 180 160 140 120 100 0,0 0,5 BSM100GD120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [ 2,5 3,0 Seriendatenblatt_BSM100GD120DLC.xls ...

Page 6

... IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 28 Eoff 24 Eon Erec Schaltverluste (typisch) Switching losses (typical) 40 Eoff 35 Eon Erec BSM100GD120DLC off C V =15V 5 600V gon goff 100 120 140 I [ off V =15V , I = 100A , V = 600V , 6( rec C = 125°C j 160 180 200 ) , rec G = 125° Seriendatenblatt_BSM100GD120DLC.xls ...

Page 7

... IC,Modul IC,Chip 120 200 (t) thJC Zth:Diode Zth:IGBT 0 [sec 21,25 64,32 83,81 0,002 0,03 0,066 47,11 124,78 136,14 0,002 0,03 0,072 V = 15V 400 600 800 1000 V [V] CE 7(8) 10 100 3 4 20,62 1,655 51,97 0,682 = 5,6 Ohm 125° 1200 1400 Seriendatenblatt_BSM100GD120DLC.xls ...

Page 8

... Technische Information / Technical Information IGBT-Module BSM100GD120DLC IGBT-Modules Econo 3 3. IS8 118.11 94.5 119 121.5 99 19.05 = 76.2 19.05 3. 1.15x1.0 15. 15.24 =76.2 110 connections to be made externally 8( Seriendatenblatt_BSM100GD120DLC1.xls ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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