BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 6

• Manufacturer Part Number: BSM100GD120DLC
• Description: IGBT Modules 1200V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 650 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
40
35
30
25
20
15
10
28
24
20
16
12
5
0
8
4
0
Schaltverluste (typisch)
Switching losses (typical)
0
0
Schaltverluste (typisch)
Switching losses (typical)
20
5
10
40
Eoff
Eon
Erec
Eoff
Eon
Erec
BSM100GD120DLC
60
15
V
E
GE
on
=15V, R
80
20
= f (I
V
E
gon
GE
R
I
C
on
C
100
=15V , I
G
) , E
= R
25
[A]
[ ]
= f (R
6(8)
goff
off
= 5,6
C
= 100A , V
= f (I
G
120
30
) , E
, V
C
CE
off
) , E
CE
= 600V, T
= 600V , T
140
= f (R
35
rec
= f (I
j
= 125°C
G
j
) , E
= 125°C
160
40
C
)
rec
= f (R
180
45
G
)
Seriendatenblatt_BSM100GD120DLC.xls
200
50