BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 8

• Manufacturer Part Number: BSM100GD120DLC
• Description: IGBT Modules 1200V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 650 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Econo 3
IS8
P+ /
N- /
21
20
1
2
3
4
3.81
BSM100GD120DLC
connections to be made externally
1 2 3
19
15.24
19.05 3.81
4 x 19.05 = 76.2
18
4
5 x 15.24 =76.2
5
6
7
8
5
118.11
121.5
6
110
99.9
94.5
119
17
7 8 9
8(8)
1.15x1.0
12
10
11
16
9
10
11
15
12
19
17
15
P+ /
N- /
13
14
Seriendatenblatt_BSM100GD120DLC1.xls