FMM6G30US60 Fairchild Semiconductor, FMM6G30US60 Datasheet - Page 6

• Manufacturer Part Number: FMM6G30US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G30US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
90
80
70
60
50
40
30
20
10
Fig 13. Gate Charge Characteristics
Fig 15. Forward Characteristics
Fig 17. Rectifier( Converter ) Characteristics
0
0
Common Cathode
V
T
T
GE
C
C
= 25]
= 125]
= 0V
Ω
V
1
R
, Reverse Voltage [V]
Forward Voltage, V
2
F
[V]
3
T
C
= 125]
25]
4
Fig 16. Reverse Recovery Characteristics
Fig 18. Rectifier( Converter ) Characteristics
Fig 14. RBSOA Characteristics
100
0.1
100
0.1
10
0.5
10
1
20
10
1
1
0.4
0
Single Nonrepetitive
Pulse T
V
R
GE
G
= 15 Ω
= 15V
5
100
J
: 125]
0.6
Collector-Emitter Voltage, V
V
10
200
F
Forward Current, I
, Forward Voltage [V]
T
C
0.8
=125 ]
300
15
400
1.0
20
25 ]
F
[A]
Common Cathode
di/dt = 60A/us
T
T
500
C
C
CE
= 25]
= 100]
25
[V]
1.2
600
FMM6G30US60 Rev. A
30
I
T
rr
700
rr
1.4