DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet

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DF200R12KE3

Manufacturer Part Number
DF200R12KE3
Description
IGBT Transistors 1200V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.DF200R12KE3.pdf (9 pages)

Specifications of DF200R12KE3

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
200 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1.04 KW
Maximum Operating Temperature
+ 125 C
Package / Case
IS5a ( 62 mm )-5
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
200.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
DF200R12KE3
Manufacturer:
Sanrex
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
DF200R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
DF200R12KE3
Quantity:
55
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
Grenzlastintegral
I²t value
Isolations Prüfspannung
insulation test voltage
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
Gate Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor Emitter Reststrom
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Wilhelm Rusche
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
Technische Information / technical information
DF200R12KE3
T
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
V
f= 1MHz, T
f= 1MHz, T
V
V
date of publication: 2002-10-07
revision: 3.0
p
p
C
C
C
vj
c
c
c
= 1ms, T
= 1ms
R
GE
GE
CE
= 200A, V
= 200A, V
= 8mA, V
= 80°C
= 25°C
= 25°C; Transistor
= 25°C
= 0V, t
= -15V...+15V
= 0V, T
= 0V, V
p
= 10ms, T
c
vj
= 80°C
CE
vj
vj
GE
GE
GE
= 25°C, V
= 25°C, V
= 25°C, V
1 (8)
= V
= 20V, T
= 15V, T
= 15V, T
GE
, T
vj
= 125°C
vj
CE
vj
CE
CE
vj
vj
= 25°C
= 25°C
= 25°C
= 125°C
= 600V
= 25V, V
= 25V, V
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C, nom
I
I
C
C
I
I
P
GE(th)
Q
CRM
FRM
CEsat
GES
CES
I²t
ISOL
CES
I
GES
I
C
F
ies
res
tot
G
min.
5,0
-
-
-
-
-
-
-
DB_DF200R12KE3_3.0
+/- 20
1200
1040
typ.
200
295
400
200
400
7,8
2,5
1,7
2,0
5,8
1,9
0,5
14
-
-
2002-10-07
max.
2,15
400
6,5
5
-
-
-
-
k A²s
mA
µC
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V

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DF200R12KE3 Summary of contents

Page 1

... V 1200 V CES 200 nom I 295 400 A CRM P 1040 W tot V +/- 20 V GES I 200 400 A FRM I²t 7,8 k A²s V 2,5 kV ISOL min. typ. max. - 1,7 2, CEsat - 2 5,0 5,8 6,5 V GE(th 1,9 µ ies res CES 400 nA GES DB_DF200R12KE3_3.0 2002-10-07 ...

Page 2

... 600V -15V 125° (8) min. typ. max 0,25 - µs d,on - 0,30 - µ 0,09 - µ 0,10 - µ 0,55 - µs d,off - 0,65 - µ 0,13 - µ 0,18 - µ off I - 800 - 0 CC´/EE´ - 1, 150 - 190 - Q µ µ rec DB_DF200R12KE3_3.0 2002-10-07 ...

Page 3

... Modul / per module = 1W/m 1W/m*K Paste grease Schraube M6 / screw M6 Anschlüsse / terminals M6 3 (8) - 1, 210 - 270 - Q µ µ rec 0,12 K/W thJC - - 0,20 K 0,15 K 0,01 - K/W thCK 150 °C vj max T -40 - 125 ° -40 - 125 °C stg 425 M 3 2 340 g DB_DF200R12KE3_3.0 2002-10-07 ...

Page 4

... Tvj = 25°C Tvj = 125°C 0,5 1,0 1,5 2,0 V [V] CE VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V 1,0 1,5 2,0 2 15V GE 2,5 3 125°C vj 3,0 3,5 4,0 4,5 5,0 DB_DF200R12KE3_3.0 2002-10-07 ...

Page 5

... Tvj = 25°C Tvj = 125° [V] GE Tvj = 25°C Tvj = 125° 20V f 600 525 450 375 300 225 150 75 0 DB_DF200R12KE3_3.0 2002-10-07 ...

Page 6

... Schaltverluste (typisch) Switching losses (typical Schaltverluste (typisch) Switching losses (typical) 100 off V =±15V Eon Eoff Erec 80 120 160 200 240 I [ =±15V, I =200A Eon Eoff Erec ( rec C =600V, T =125° 280 320 360 400 = off G rec G =600V, T =125° DB_DF200R12KE3_3.0 2002-10-07 ...

Page 7

... V =±15V 400 600 800 (t) Zth : IGBT Zth : Inversdiode Zth : Diode Chopper 2,28 1,187E-05 3,78 1,187E-05 2,84 1,187E-05 =125° 1000 1200 1400 DB_DF200R12KE3_3.0 2002-10-07 ...

Page 8

... Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram Kriechstrecke creepage distance Luftstrecke clearance distance 8 ( DB_DF200R12KE3_3.0 2002-10-07 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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