DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 7

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / technical information
r
i
r
[K/kW] :
i
i
450
400
350
300
250
200
150
100
[K/kW] :
[s] :
50
r
i
i
0
[s] :
[K/kW] :
i
0
Chopper Diode
[s] :
Inversdiode
0,001
Chopper Diode
0,01
i
Inversdiode
DF200R12KE3
0,1
IGBT
1
0,001
IGBT
200
IC,Chip
IC,Modul
6,499E-02
6,499E-02
6,499E-02
400
50,44
83,98
63,07
0,01
1
7 (8)
600
2,601E-02
2,601E-02
2,601E-02
V
100,88
60,45
75,68
CE
2
[V]
t [s]
0,1
800
V
Z
GE
thJC
2,364E-03
2,364E-03
2,364E-03
=±15V, T
11,36
6,83
8,53
3
= f (t)
1000
Zth : IGBT
Zth : Inversdiode
Zth : Diode Chopper
vj
1
=125°C, R
1,187E-05
1,187E-05
1,187E-05
1200
2,28
3,78
2,84
DB_DF200R12KE3_3.0
4
G
=3,6
1400
2002-10-07
10