DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 4

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
output characteristic (typical)
Ausgangskennlinienfeld (typisch)
output characteristic (typical)
Technische Information / technical information
400
360
320
280
240
200
160
120
400
360
320
280
240
200
160
120
80
40
80
40
0
0
DF200R12KE3
0,0
0,0
0,5
0,5
1,0
VGE=19V
VGE=17V
VGE=15V
VGE=13V
VGE=11V
VGE=9V
Tvj = 25°C
Tvj = 125°C
1,0
1,5
4 (8)
2,0
1,5
V
V
CE
CE
2,5
[V]
[V]
2,0
3,0
I
V
I
T
C
C
GE
= f(V
vj
3,5
= f(V
2,5
= 125°C
= 15V
CE
CE
)
4,0
)
DB_DF200R12KE3_3.0
3,0
4,5
2002-10-07
5,0
3,5