DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 3

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Chopperdiode / chopper diode
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Ausschaltenergie pro Puls
reverse recovery energy
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Übergangs Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment, mech. Befestigung
mounting torque
Anzugsdrehmoment, elektr. Anschlüsse
terminal connection torque
Gewicht
weight
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Charakteristische Werte / characteristic values
Thermische Eigenschaften / thermal properties
Mechanische Eigenschaften / mechanical properties
Technische Information / technical information
DF200R12KE3
I
I
I
V
V
I
V
V
I
V
V
Transistor Wechelr. / transistor inverter
Inversdiode / free wheel diode
Chopper Diode / chopper diode
pro Modul / per module
Schraube M6 / screw M6
Anschlüsse / terminals M6
F
F
F
F
F
Paste
= 300A, V
= 300A, V
=300A, -di
R
R
=300A, -di
R
R
=300A, -di
R
R
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 1W/m*K /
GE
GE
F
F
F
GE
GE
GE
GE
GE
GE
/dt= 3000A/µs
/dt= 3000A/µs
/dt= 3000A/µs
3 (8)
= 0V, T
= 0V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
grease
vj
vj
= 25°C
= 125°C
vj
vj
vj
vj
vj
vj
= 1W/m*K
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
T
R
R
T
E
T
I
vj max
V
Q
RM
thCK
vj op
M
M
G
thJC
rec
stg
F
r
-40
-40
3,0
2,5
-
-
-
-
-
-
-
-
-
-
-
-
-
DB_DF200R12KE3_3.0
Al
1,65
1,65
0,01
210
270
425
340
30
56
14
26
2
-
-
-
-
-
-
-
-
O
3
2002-10-07
2,15
0,12
0,20
0,15
150
125
125
6,0
5,0
-
-
-
-
-
-
-
-
K/W
K/W
K/W
K/W
Nm
Nm
µC
µC
mJ
mJ
°C
°C
°C
V
V
A
A
g