DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 6

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
Technische Information / technical information
80
70
60
50
40
30
20
10
100
0
90
80
70
60
50
40
30
20
10
0
DF200R12KE3
0
0
40
4
80
8
Eon
Eoff
Erec
120
Eon
Eoff
Erec
6 (8)
12
V
V
E
E
160
GE
GE
on
on
=±15V, R
=±15V, I
= f (I
= f (R
16
I
R
C
200
G
[A]
C
[ ]
G
) , E
C
G
) , E
=200A, V
20
=3,6 , V
240
off
off
= f (I
= f (R
24
CE
280
CE
=600V, T
=600V, T
C
) , E
G
28
320
) , E
rec
vj
DB_DF200R12KE3_3.0
vj
=125°C
=125°C
rec
= f (I
360
32
= f (R
C
)
2002-10-07
400
G
36
)