DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 5

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
Technische Information / technical information
400
360
320
280
240
200
160
120
400
350
300
250
200
150
100
80
40
50
0
0
DF200R12KE3
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
5
6
Tvj = 25°C
Tvj = 125°C
Tvj = 25°C
Tvj = 125°C
7
5 (8)
8
V
F
[V]
V
GE
9
[V]
10
I
V
I
C
F
CE
= f(V
= f(V
= 20V
11
F
GE
)
)
DB_DF200R12KE3_3.0
12
600
525
450
375
300
225
150
75
0
2002-10-07
13